Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("Rai-Choudhury, P")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 134

  • Page / 6
Export

Selection :

  • and

Handbook of microlithography, micromachining, and microfabrication (Volume 2, Micromachining and microfabrication)Rai-Choudhury, P.1997, isbn 0-8194-2379-3, VIII, 692 p, isbn 0-8194-2379-3Book

MATERIAL FOR LOW-COST SOLAR CELLSSHIRLAND FA; RAI CHOUDHURY P.1978; REP. PROGR. PHYS.; GBR; DA. 1978; VOL. 41; NO 12; PP. 1839-1879; H.T. 2; BIBL. 2 P.Article

FORMATION OF SILICON WHISKERS BY ALUMINUM-QUARTZ INTERACTION.RAI CHOUDHURY P; TAKEI WJ.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1228-1229; BIBL. 2 REF.Article

PROCESS-INDUCED EFFECTS ON CARRIER LIFETIME AND DEFECTS IN FLOAT ZONE SILICONROHATGI A; RAI CHOUDHURY P.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1136-1139; BIBL. 20 REF.Article

LIFETIMES AND DIODE CHARACTERISTICS IN EPITAXIAL SILICONRAI CHOUDHURY P; SCHRODER DK.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1580-1585; BIBL. 19 REF.Serial Issue

ELECTRON IRRADIATION INDUCED RECOMBINATION CENTERS IN SILICON-MINORITY CARRIER LIFETIME CONTROL.RAI CHOUDHURY P; BARTKO J; JOHNSON JE et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 814-818; BIBL. 8 REF.Article

DIFFUSION AND INCORPORATION OF ALUMINUM IN SILICON.RAI CHOUDHURY P; SELIM FA; TAKEI WJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 762-766; BIBL. 10 REF.Article

COMPATIBILITY OF OXIDE PASSIVATION AND PLANAR JUNCTIONS WITH AL, GA, AND P DIFFUSIONS.RAI CHOUDHURY P; KAO YC; SWEENEY GG et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1509-1516; BIBL. 12 REF.Article

An approach toward 20-percent-efficient silicon solar cellsROHATGI, A; RAI-CHOUDHURY, P.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 1, pp 1-7, issn 0018-9383Article

High-efficiency silicon solar cells: development, current issues and futurex directionsROHATGI, A; RAI-CHOUDHURY, P.Solar cells. 1986, Vol 17, Num 1, pp 119-133, issn 0379-6787Article

IMPURITIES IN POLYCRYSTALLINE SILICON SOLAR CELLSROHATGI A; DAVIS JR; HOPKINS RH et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 411-416; BIBL. 16 REF.Conference Paper

IMPURITIES IN SILICON SOLAR CELLSDAVIS JR JR; AJEET ROHATGI; HOPKINS RH et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 677-687; BIBL. 11 REF.Article

Diagnostic techniques for semiconductor materials and devices (Montreal PQ, 6-8 May 1997)Rai-Choudhury, P; Benton, J.L; Schroder, D.K et al.SPIE proceedings series. 1997, isbn 0-8194-2765-9, IX, 478 p, isbn 0-8194-2765-9Conference Proceedings

SOLAR CELLS AND MODULES FROM DENDRITIC WEB SILICONCAMPBELL RB; ROHATGI A; SEMAN EJ et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 332-336; BIBL. 6 REF.Conference Paper

PROCEEDINGS/6TH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, ATLANTA GA, OCTOBER 9-14, 1977DONAGHEY LF ED; RAI CHOUDHURY P ED; TAUBER RN ED et al.1977; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 6/1977-10-09/ATLANTA; USA; PRINCETON, N.Y.: ELECTROCHEMICAL SOCIETY; DA. 1977; XI-581 P.: ILL.; 23 CMConference Proceedings

POCL3 GETTERING OF TITANIUM, MOLYBDENUM AND IRON-CONTAMINED SILICON SOLAR CELLSROHATGI A; CAMPBELL RB; DAVIS JR et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 908-911; BIBL. 12 REF.Conference Paper

EFFECT OF TITANIUM, COPPER AND IRON ON SILICON SOLAR CELLSROHATGI A; DAVIS JR; HOPKINS RH et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 415-422; BIBL. 19 REF.Article

SILICON SOLAR CELLS FROM TRANSITION METAL DOPED CZOCHRALSKI AND WEB CRYSTALS.DAVIS JR; RAI CHOUDHURY P; BLAIS PD et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 106-111; BIBL. 4 REF.Conference Paper

SOLAR CELL CONTACTSMEIER DL; CAMPBELL RB; DAVIS JR JR et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 904-910; BIBL. 15 REF.Conference Paper

IMPURITY EFFECTS IN SILICON SOLAR CELLSDAVIS JR; HOPKINS RH; RAI CHOUDHURY P et al.1979; ELECTROCHEMICAL SOCIETY. MEETING. 155/1979/BOSTON MA; USA; PRINCETON: ELECTROCHEMICAL SOCIETY; DA. 1979; VOL. 1; PP. 174-176; BIBL. 1 REF.Conference Paper

Direct observation and elimination of defects in gate oxide for reliable moslsisITSUMI, M.SPIE proceedings series. 1997, pp 147-159, isbn 0-8194-2765-9Conference Paper

Monitoring techniques of corrosive species affecting integrated circuit metal lithographyMAUTZ, K. E.SPIE proceedings series. 1997, pp 429-440, isbn 0-8194-2765-9Conference Paper

Characterization challenges for the ULSI ERASHAFFNER, T. J.SPIE proceedings series. 1997, pp 1-15, isbn 0-8194-2765-9Conference Paper

Identification and quantification of trace metal impurities in silicon using the ELYMAT lifetime measurementGUPTA, D. C.SPIE proceedings series. 1997, pp 267-279, isbn 0-8194-2765-9Conference Paper

Silicon on insulator characterization techniques and resultsWETTEROTH, T.SPIE proceedings series. 1997, pp 177-186, isbn 0-8194-2765-9Conference Paper

  • Page / 6